Schottky Barrier Diodes (SBD)
MA2J728
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit
For wave detection circuit
K
A
0.625
0.4
±
0.1
1.7
±
0.1
2.5
±
0.2
0.4
±
0.1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
Symbol
V
R
V
RM
I
FM
I
F
T
j
T
stg
Rating
30
30
150
30
125
−55
to
+125
Unit
V
V
mA
mA
°C
°C
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 2A
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
C
t
t
rr
η
V
R
= 30 V
I
F
= 1 mA
I
F
= 30 mA
V
R
= 1 V, f = 1 MHz
I
F
= I
R
= 10 mA
I
rr
= 1 mA, R
L
= 100
Ω
V
in
= 3 V
(peak)
, f = 30 MHz
R
L
= 3.9 kΩ, C
L
= 10 pF
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : t
rr
measuring instrument
Bias Applicaiton Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
Output Pulse
Conditions
Min
Typ
Max
300
0.4
1.0
Unit
nA
V
V
pF
ns
1.5
1.0
Detection efficiency
65
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.7
±
0.1
•
Sealed in the S-mini (2-pin) mold and super small type
•
Low forward rise voltage (V
F
) and satisfactory wave detection
efficiency (η)
•
Extremely low reverse current I
R
•
Small temperature coefficient of forward characteristic
2
0.16
−
0.06
+
0.1
1
1.25
±
0.1
0.5
±
0.1
I
Features
0.3
%
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
