Schottky Barrier Diodes (SBD)
MA4X714
Silicon epitaxial planar type
Unit : mm
For switching circuits
For wave detection circuit
•
Two MA3X704As are contained in one package (Two diodes in a
different direction)
•
Optimum for low-voltage rectification because of its low forward
rise voltage (V
F
)
•
Optimum for high-frequency rectification because of its short re-
verse recovery time (t
rr
)
2.9
−
0.05
2.8
0.65
±
0.15
+
0.2
−
0.3
+
0.25
1.5
−
0.05
0.65
±
0.15
1.9
±
0.2
0.95
+
0.2
0.95
0.5
I
Features
0.5 R
4
1
+
0.1
3
0.4
−
0.05
2
0.2
+
0.2
−
0.1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak forward
current
Forward current
(DC)
Single
Double
*
Single
Double
*
T
j
T
stg
I
F
Symbol
V
R
I
FM
Rating
30
150
110
30
20
125
−55
to
+125
°C
°C
mA
Unit
V
mA
1.1
0.4
±
0.2
1 : Cathode 1
2 : Anode 2
3 : Cathode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M1P
Internal Connection
4
3
1
2
Junction temperature
Storage temperature
Note) * : Value per chip
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
C
t
t
rr
η
V
R
= 30 V
I
F
= 1 mA
I
F
= 30 mA
V
R
= 1 V, f = 1 MHz
I
F
= I
R
= 10 mA
I
rr
= 1 mA, R
L
= 100
Ω
V
in
= 3 V
(peak)
, f = 30 MHz
R
L
= 3.9 kΩ, C
L
= 10 pF
1.5
1.0
Conditions
Min
Typ
Max
1
0.4
1.0
Unit
µA
V
V
pF
ns
Detection efficiency
65
0 to 0.1
0.1 to 0.3
0.8
0.16
−
0.06
+
0.1
0.6
−
0
+
0.1
0.4
−
0.05
1.45
+
0.1
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : t
rr
measuring instrument
Bias Aplication Unit N-50BU
t
r
Input Pulse
t
p
10%
t
I
F
Output Pulse
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
