Switching Diodes
MA6S121
Silicon epitaxial planar type
Unit : mm
For switching circuit
I
Features
•
Small S-mini type 6-pin package
•
Three isolated elements contained in one package, allowing high-
density mounting
•
Flat lead type, resulting in improved mounting efficiency and
solderability with the high-speed mounting machine
•
Short reverse recovery time t
rr
•
Small terminal capacitance, C
t
2.0
±
0.1
0.65 0.65
1
2
3
2.1
±
0.1
1.25
±
0.1
6
5
4
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Average forward current
*1
Peak forward current
*1
Non-repetitive peak forward
surge current
*1,2
Junction temperature
Storage temperature
Note) *1 : Value for single diode
*2 : t = 1 s
Symbol
V
R
V
RM
I
F(AV)
I
FM
I
FSM
T
j
T
stg
Rating
80
80
100
225
500
150
−55
to
+150
Unit
V
V
mA
mA
mA
°C
°C
0.7
±
0.1
1 : Anode 1
4 : Cathode 3
2 : Anode 2
5 : Cathode 2
3 : Anode 3
6 : Cathode 1
S-Mini Type Package (6-pin)
Marking Symbol: M2D
Internal Connection
1
2
3
6
5
4
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
V
R
C
t
t
rr
V
R
=
75 V
I
F
=
100 mA
I
R
=
100
µA
V
R
=
0 V, f
=
1 MHz
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 · I
R
, R
L
=
100
Ω
80
2
3
Conditions
Min
Typ
Max
0.1
1.2
Unit
µA
V
V
pF
ns
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.2
±
0.05
1