Fast Recovery Diodes (FRD)
MA3D650
Silicon planar type (cathode common)
Unit : mm
For high-frequency rectification
15.0
±
0.5
9.9
±
0.3
4.6
±
0.2
I
Features
•
Low forward rise voltage V
F
•
Fast reverse recovery time t
rr
•
TO-220D (Full-pack package) with high dielectric breakdown
voltage
>
5.0 kV
•
Easy-to-mount, caused by its V cut lead end
φ
3.2
±
0.1
13.7
±
0.2
4.2
±
0.2
1.4
±
0.2
1.6
±
0.2
0.8
±
0.1
2.54
±
0.3
3 5.08
±
0.5
3.0
±
0.5
2.9
±
0.2
2.6
±
0.1
0.55
±
0.15
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse
surge voltage
Average forward current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
T
j
T
stg
−40
to
+150
−40
to
+150
°C
°C
Symbol
V
RRM
V
RSM
I
F(AV)
I
FSM
Rating
200
200
10
60
Unit
V
V
A
A
1
2
1 : Anode
2 : Cathode
3 : Anode
TO-220D Package
Internal Connection
1
2
3
Note) * : Half sine-wave; 10 ms/cycle
I
Electrical Characteristics
T
a
=
25°C
Parameter
Repetitive peak reverse current
Symbol
I
RRM1
I
RRM2
Forward voltage (DC)
Reverse recovery time
*
Thermal resistance
V
F
t
rr
R
th(j-c)
R
th(j-a)
Note) 1. Rated input/output frequency: 10 MHz
2. Tightening torque-max. 8 kg
×
cm
3. * : t
rr
measuring circuit
50
Ω
50
Ω
Conditions
V
RRM
= 200 V, T
C
= 25°C
V
RRM
= 200 V, T
j
= 150°C
I
F
= 5 A, T
C
= 25°C
I
F
= 1 A, I
R
= 1 A
Min
Typ
Max
100
6
0.98
30
3
63
Unit
µA
mA
V
ns
°C/W
°C/W
t
rr
I
F
D.U.T
5.5
Ω
I
R
0.1
×
I
R
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
