PIN Diodes
MA6X556
Silicon epitaxial planar type
For UHF and SHF bands AGC
I
Features
•
Small diode capacitance C
D
•
Large variable range of forward dynamic resistance r
f
•
Mini type package, allowing downsizing of equipment and auto-
matic insertion through the taping package and magazine package
2.8
−
0.3
0.65
±
0.15
6
1.9
±
0.1
0.95
0.95
5
1.5
−
0.05
1
+
0.25
+
0.2
Unit : mm
0.65
±
0.15
1.45
±
0.1
0.3
−
0.05
+
0.1
2.9
−
0.05
+
0.2
2
4
3
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
R
V
RM
I
F
P
D
T
opr
T
stg
Rating
40
45
100
150
−25
to
+85
−55
to
+150
Unit
V
V
mA
mW
°C
°C
1.1
−
0.1
1 : Cathode 1
4 : Anode 3
2 : Cathode 2
5 : Anode 2
3 : Cathode 3
6 : Anode 1
Mini Type Package (6-pin)
Marking Symbol: M2T
Internal Connection
6
5
4
1
2
3
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Forward dynamic resistance
*
Symbol
I
R
V
F
C
D
r
f1
r
f2
Note) 1．
Rated input/output frequency: 100 MHz
2. Each characteristic is a standard for individual diode
3． : r
f
measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
*
V
R
= 40 V
I
F
= 100 mA
V
R
= 15 V, f = 1 MHz
I
F
= 10
µA,
f = 100 MHz
I
F
= 10 mA, f = 100 MHz
1
1.05
0.3
2
6
10
Conditions
Min
Typ
Max
100
1.2
0.5
Unit
nA
V
pF
kΩ
Ω
0 to 0.05
0.1 to 0.3
0.4
±
0.2
0.8
0.16
−
0.06
+
0.2
0.5
−
0.05
+
0.1
+
0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
