Schottky Barrier Diodes (SBD)
MA2S784
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit
For small current rectification
1.60
±
0.05
0.30
±
0.05
0.80
−
0.03
+
0.05
I
Features
•
Super small SS-mini type 2-pin package
•
Allowing high-density mounting
•
Allowing to rectify under (I
F(AV)
= 100 mA) condition
•
Optimum for high-frequency rectification because of its short
reverse recovery time (t
rr
)
•
Low V
F
(forward rise voltage), with high rectification efficiency
( 0.2 )
1.20
−
0.03
+
0.05
1
2
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward current
Average forward current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
Symbol
V
R
V
RRM
I
FM
I
F(AV)
I
FSM
T
j
T
stg
Rating
30
30
300
100
1
125
−55
to
+125
Unit
V
V
mA
mA
A
°C
°C
0.6
±
0.05
1 : Anode
2 : Cathode
SS-Mini Type Package (2-pin)
Marking Symbol: C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
C
t
t
rr
V
R
= 30 V
I
F
= 100 mA
V
R
= 0 V, f = 1 MHz
I
F
= I
R
= 100 mA
I
rr
= 10 mA, R
L
= 100
Ω
20
2.0
Conditions
Min
Typ
Max
15
0.55
Unit
µA
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : t
rr
measuring circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.15
±
0.05
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
