欢迎访问ic37.com |
会员登录 免费注册
发布采购

MA2S111 参数 Datasheet PDF下载

MA2S111图片预览
型号: MA2S111
PDF下载: 下载PDF文件 查看货源
内容描述: 硅外延平面型 [Silicon epitaxial planar type]
分类和应用:
文件页数/大小: 2 页 / 49 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号MA2S111的Datasheet PDF文件第2页  
Switching Diodes
MA2S111
Silicon epitaxial planar type
Unit : mm
For switching circuits
I
Features
Super-small SS-mini type package
Allowing high-density mounting
Short reverse recovery time t
rr
Small terminal capacitance, C
t
1.60
±
0.05
( 0.2 )
1.20
0.03
0.30
±
0.05
0.80
0.03
+
0.05
+
0.05
1
2
Parameter
Reverse voltage (DC)
Peak reverse voltage
Average forward current
Peak forward current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
Note) * : t = 1 s
Symbol
V
R
V
RM
I
F(AV)
I
FM
I
FSM
T
j
T
stg
Rating
80
80
100
225
500
150
−55
to
+150
Unit
V
V
mA
mA
mA
°C
°C
0.6
±
0.05
1 : Anode
2 : Cathode
EIAJ : SC-79
SS-Mini Type Package (2-pin)
Marking Symbol: A
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
V
R
C
t
t
rr
V
R
=
75 V
I
F
=
100 mA
I
R
=100 µA
V
R
=
0 V, f
=
1 MHz
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 · I
R
, R
L
=
100
80
0.6
2
3
0.95
Conditions
Min
Typ
Max
100
1.2
Unit
nA
V
V
pF
ns
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
W.F.Analyzer
(SAS-8130)
R
i
=
50
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.15
±
0.05
I
Absolute Maximum Ratings
T
a
=
25°C
1