Switching Diodes
MA3X198
(MA198)
Silicon epitaxial planar type
Unit: mm
For wave detection
■
Features
•
Two elements contained in one package, allowing high-density
mounting
•
Soft recovery characteristic (t
rr
=
100 ns)
1
0.40
+0.10
–0.05
3
1.50
+0.25
–0.05
2.8
+0.2
–0.3
0.16
+0.10
–0.06
2
(0.65)
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current
(Average)
Repetitive peak
forward current
Non-repetitive peak
forward surge current
*
Junction temperature
Storage temperature
Note) *: t
=
1 s
Single
Series
Single
Series
Single
Series
T
j
T
stg
I
FSM
I
FRM
Symbol
V
R
V
RRM
I
F(AV)
Rating
40
40
100
75
225
170
500
325
150
−55
to
+150
°C
°C
mA
mA
Unit
V
V
mA
10˚
1.1
+0.2
–0.1
1.1
+0.3
–0.1
0 to 0.1
EIAJ: SC-59
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
Mini3-G1 Package
Marking Symbol: M2F
Internal Connection
3
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Forward voltage
Symbol
V
F1
V
F2
Reverse current
Terminal capacitance
Reverse recovery time
*
I
R
C
t
t
rr
I
F
=
100
µA
I
R
=
100 mA
V
R
=
40 V
V
R
=
6 V, f
=
1 MHz
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 I
R
, R
L
=
100
Ω
Conditions
Min
0.65
1
2
Typ
Max
0.72
1.2
10
Unit
V
V
nA
pF
ns
1.0
2.0
100
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2005
SKF00041DED
0.4
±0.2
5˚
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
