Switching Diodes
MA4X160
(MA160)
Silicon epitaxial planar type
For high-speed switching circuits
■
Features
•
Two isolated elements are contained in one package, allowing
high-density mounting
•
Centrosymmetrical wiring, allowing to free from the taping direction
•
Short reverse recovery time t
rr
•
Small terminal capacitance C
t
2.90
+0.02
–0.05
1.9
±0.2
(0.95) (0.95)
3
4
0.16
+0.1
–0.06
Unit: mm
1.50
+0.25
–0.05
0.5R
2.8
+0.2
–0.3
5˚
2
(0.2)
0.60
+0.10
–0.05
10˚
1
(0.65)
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
(Average)
Repetitive peak
forward current
Non-repetitive peak
Single
Double
Single
Double
Single
I
FSM
T
j
T
stg
I
FRM
Symbol
V
R
V
RM
I
F(AV)
Rating
40
40
100
75
225
170
500
375
150
−55
to
+150
°C
°C
mA
mA
Unit
V
V
mA
+0.2
0 to 0.1
1.1
–0.1
EAIJ: SC-61
Marking Symbol: M1D
Internal Connection
3
4
forward surge current
*
Double
Junction temperature
Storage temperature
Note) *: t
=
1 s
2
1
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F
V
R
I
R
C
t
t
rr
I
R
=
100
µA
V
R
=
35 V
Conditions
I
F
=
100 mA
Min
Typ
0.95
1.1
+0.3
–0.1
1: Cathode 1
2: Anode 2
3: Cathode 2
4: Anode 1
Mini4-G1 Package
Max
1.20
Unit
V
V
µA
pF
ns
40
0.1
0.9
2.0
3
V
R
=
0 V, f
=
1 MHz
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 I
R
, R
L
=
100
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
SKF00044AED
0.4
±0.2
Publication date: November 2003
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
