Switching Diodes
MA3J142D
(MA142WA)
, MA3J142E
(MA142WK)
Silicon epitaxial planar type
0.3
+0.1
–0
Unit: mm
0.15
+0.1
–0.05
For switching circuits
■
Features
•
Two isolated elements contained in one package, allowing high-
density mounting
3
1.25
±0.1
2.1
±0.1
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
5˚
0.9
±0.1
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Single
Double
Peak forward
current
Non-repetitive peak
forward surge current
*
Junction temperature
Storage temperature
Note) *: t
=
1 s
Single
Double
Single
Double
T
j
T
stg
I
FSM
I
FM
Symbol
V
R
V
RM
I
F
Rating
80
80
100
150
225
340
500
750
150
−55
to
+150
°C
°C
mA
mA
Unit
V
V
mA
0 to 0.1
EIAJ: SC-79
SMini3-F1 Package
MA3J142D MA3J142E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode
Cathode
Marking Symbol:
•
MA3J142D: MO
•
MA3J142E: MU
Internal Connection
3
3
1
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
MA3J142D
MA3J142E
Reverse recovery time
*
MA3J142D
MA3J142E
t
rr
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 I
R
, R
L
=
100
Ω
Symbol
V
F
V
R
I
R
C
t
I
R
=
100
µA
V
R
=
75 V
V
R
=
0 V, f
=
1 MHz
Conditions
I
F
=
100 mA
D
2
1
E
Min
Typ
Max
1.2
(0.15)
2
(0.425)
5˚
Unit
V
V
80
100
15
2
10
3
nA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Publication date: March 2004
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part numbers in the parenthesis show conventional part number.
SKF00018BED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
