Schottky Barrier Diodes (SBD)
MA3J702
(MA10702)
Silicon epitaxial planar type
Unit: mm
For high frequency rectification
3
0.3
+0.1
–0
0.15
+0.1
–0.05
•
I
F(AV)
=
500 mA rectification is possible
•
Small reverse current I
R
. (About 1/10 of I
R
of the ordinary
products)
•
S-Mini type 3-pin package
1.25
±0.1
2.1
±0.1
I
Features
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
5°
0.9
±0.1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Repetitive peak reverse-voltage
Average forward current
Non-repetitive peak forward-
surge-current
*
Junction temperature
Storage temperature
Symbol
V
R
V
RRM
I
F(AV)
I
FSM
T
j
T
stg
Rating
20
20
500
3
125
−55
to
+125
Unit
V
V
mA
A
°C
°C
0 to 0.1
1 : Anode
2 : N.C.
3 : Cathode
SMini3-F1 Package
Marking Symbol: M4R
Internal Connection
3
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1
2
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Symbol
I
R1
I
R2
Forward voltage (DC)
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
Conditions
V
R
=
5 V
V
R
=
10 V
I
F
=
10 mA
I
F
=
500 mA
V
R
=
0 V, f
=
1 MHz
I
F
=
I
R
=
100 mA
I
rr
=
10 mA, R
L
=
100
Ω
Min
Typ
Max
1
10
(0.15)
Unit
µA
V
0.3
0.5
60
5
0.4
0.55
C
t
t
rr
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
Bias Application Unit N-50BU
t
r
10%
3. *: t
rr
measuring instrument
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00053AED
(0.425)
5°
pF
ns
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
