GU-E PhotoMOS (AQW414EH)
2. Electrical characteristics (Ambient temperature: 25°C 77°F)
Item
Symbol
AQW414EH (A)
Condition
IL=Max.
Typical
1.3mA
3.0mA
LED operate (OFF)
current
IFoff
Maximum
Minimum
Typical
0.4mA
LED reverse (ON)
current
Input
IFon
VF
IL=Max.
1.2mA
Typical
1.25 (1.14 V at IF=5mA)
1.5V
LED dropout voltage
On resistance
IF=50mA
Maximum
IF=0mA
IL=Max.
Within 1 s on time
Typical
26Ω
35Ω
Ron
Maximum
Output
Off state leakage
current
IF=5mA
VL=Max.
Maximum
ILeak
Toff
10µA
Typical
0.8ms
3.0ms
0.2ms
1.0ms
0.8pF
1.5pF
IF=0mA➝5mA
Turn on time*
Turn off time*
I/O capacitance
IL=Max.
Maximum
Typical
IF=5mA➝0mA
Ton
IL=Max.
Transfer charac-
teristics
Maximum
Typical
f =1MHz
VB =0V
Ciso
Riso
Maximum
Initial I/O isolation
resistance
Minimum
1,000MΩ
500V DC
Note: Recommendable LED forward current IF= 5 to 10mA.
For type of connection
*Operate/Reverse time
Input
Output
10%
90%
Toff
Ton
I For Dimensions
I For Schematic and Wiring Diagrams
I For Cautions for Use
REFERENCE DATA
1. Load current vs. ambient temperature
characteristics
2. On resistance vs. ambient temperature
characteristics
3.Operate (OFF) time vs.ambient temperature
characteristics
Allowable ambient temperature: –40°C to +85°C
Measured portion: between terminals 5 and 6, 7 and 8;
LED current: 0 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
50
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
–40°F to +185°F
200
3
2.5
2
40
30
20
10
0
Using only 1 channel
Using 2 channels
150
100
50
1.5
1
0.5
0
0
–40 –20
0
20
40
60
8085 100
–40
–20
0
20
40
60
8085
–40 –20
0
20
40
60
8085
Ambient temperature, °C
Ambient temperature, °C
Ambient temperature, °C
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