GE 2 Form A (AQW21❍EH)
8-(2). Current vs. voltage characteristics of
output at MOS portion
Measured portion: between terminals 5 and 6, 7 and 8;
Ambient temperature: 25°C
77°F
0.6
Current, A
0.4
0.2
0
–1
–0.5
0
–0.2
–0.4
–0.6
0.5
Voltage, V
1
–6
–4
–2
0
Current, A
8-(3). Current vs. voltage characteristics of
output at MOS portion
Measured portion: between terminals 5 and 6, 7 and 8;
Ambient temperature: 25°C
77°F
0.08
0.06
0.04
0.02
0
2
4
6
Voltage, V
–0.02
–0.04
9-(1). Off state leakage current vs. load voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Ambient temperature: 25°C
77°F
Off state leakage current, A
10
–3
10
–6
10
–9
–0.06
–0.08
10
–12
0
20
40
60
80
100
Load voltage, V
9-(2). Off state leakage current vs. load voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Ambient temperature: 25°C
77°F
10. Turn on time vs. LED forward current
characteristics
Sample: All types
Measured portion: between terminals 5 and 6, 7 and 8;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C
77°F
3
2.5
Turn on time, ms
11. Turn off time vs. LED forward current
characteristics
Sample: All types
Measured portion: between terminals 5 and 6, 7 and 8;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C
77°F
0.2
10
–3
Off state leakage current, A
Turn off time, ms
10
–5
0.15
2
1.5
1
0.5
0
10
–7
0.1
10
–9
10
–11
0.05
10
–13
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
LED forward current, mA
LED forward current, mA
20
40
60
80
Load voltage, V
100
12-(1). Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Frequency: 1 MHz; Ambient temperature: 25°C
77°F
50
Output capacitance, pF
12-(2). Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Frequency: 1 MHz; Ambient temperature: 25°C
77°F
200
Output capacitance, pF
40
150
30
100
20
10
20
50
10
0
0
30
40
50
0
0
5
10
15
20
25
30
Applied voltage, V
Applied voltage, V
–4–
ASCTB53E 201703-T
PANASONIC [ PANASONIC SEMICONDUCTOR ]
