s
Electrical Characteristics
(Ta=25˚C) (continued)
• AN7910T/AN7910F (–10V Type)
Parameter
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Peak output current
Output voltage temperature coefficient
Symbol
V
O
V
O
REG
IN
REG
L
I
bias
∆I
bias (IN)
∆I
bias (L)
V
no
RR
V
DIF (min.)
I
O (Peak)
∆V
O
/Ta
Condition
T
j
=25˚C
V
I
=–12.5
to –25V,
I
O
=5mA
to 1A, P
D
< *
=
V
I
=–12.5
to –27V, T
j
=25˚C
V
I
=–13
to –19V, T
j
=25˚C
I
O
=5mA
to 1.5A, T
j
=25˚C
I
O
=250
to 750mA, T
j
=25˚C
T
j
=25˚C
V
I
=–12.5
to –27V, T
j
=25˚C
I
O
=5mA
to 1A, T
j
=25˚C
f=10Hz to 100kHz, Ta=25˚C
V
I
=–13
to –23V, I
O
=100mA,
f=120Hz
I
O
=1A,
T
j
=25˚C
T
j
=25˚C
I
O
=5mA,
T
j
=0
to 125˚C
56
64
71
1.1
2.1
– 0.7
min
–9.6
–9.5
8
2.5
12
4
2.5
typ
–10
max
–10.4
–10.5
200
100
200
100
5
1
0.5
Unit
V
V
mV
mV
mV
mV
mA
mA
mA
µV
dB
V
A
mV/˚C
Note 1) The specified condition T
j
=25˚C
means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) Unless otherwise specified, V
I
=–16V,
I
O
=500mA,
C
I
=2µF,
C
O
=1µF,
T
j
=0
to 125˚C
* AN7900T series : 15W, AN7900F series : 10.25W
• AN7912T/AN7912F (–12V Type)
Parameter
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Peak output current
Output voltage temperature coefficient
Symbol
V
O
V
O
REG
IN
REG
L
I
bias
∆I
bias (IN)
∆I
bias (L)
V
no
RR
V
DIF (min.)
I
O (Peak)
∆V
O
/Ta
Condition
T
j
=25˚C
V
I
=–14.5
to –27V,
I
O
=5mA
to 1A, P
D
< *
=
V
I
=–14.5
to –30V, T
j
=25˚C
V
I
=–16
to –22V, T
j
=25˚C
I
O
=5mA
to 1.5A, T
j
=25˚C
I
O
=250
to 750mA, T
j
=25˚C
T
j
=25˚C
V
I
=–14.5
to –30V, T
j
=25˚C
I
O
=5mA
to 1A, T
j
=25˚C
f=10Hz to 100kHz, Ta=25˚C
V
I
=–15
to –25V, I
O
=100mA,
f=120Hz
I
O
=1A,
T
j
=25˚C
T
j
=25˚C
I
O
=5mA,
T
j
=0
to 125˚C
55
75
70
1.1
2.1
– 0.8
min
–11.5
–11.4
10
3
12
4
2.5
typ
–12
max
–12.5
–12.6
240
120
240
120
5
1
0.5
Unit
V
V
mV
mV
mV
mV
mA
mA
mA
µV
dB
V
A
mV/˚C
Note 1) The specified condition T
j
=25˚C
means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) Unless otherwise specified, V
I
=–19V,
I
O
=500mA,
C
I
=2µF,
C
O
=1µF,
T
j
=0
to 125˚C
* AN7900T series : 15W, AN7900F series : 10.25W
5
PANASONIC [ PANASONIC SEMICONDUCTOR ]
