s
Electrical Characteristics (cont.) (VCC=4.6V, Ta=25±2˚C)
Parameter
Color difference
γ
characteristics (3)
Between channels
γ
characteristics
Color difference gain control characteristics (1)
Note B)
Color difference gain control characteristics (2)
Note B)
Iris
γ
characteristics (1)
Iris
γ
characteristics (2)
Iris
γ
characteristics (3)
Luminance signal blanking level
Iris signal blanking level
R-Y blanking level
B-Y blanking level
VAP generation circuit gain
Note C)
Edge suppression characteristics (1)
Note B)
Edge suppression characteristics (2)
Note B)
Luminance high-cut characteristics
AP mix circuit luminance amplification characteristics
Horizontal APDL group delay
Aperture mix circuit VAP gain
White fade characteristics
Delay signal amp. gain (1)
Note A)
Delay signal amp. gain (2)
Note A)
Delay signal amp. gain (3)
Note A)
Delay signal amp. gain (4)
Note A)
Color difference high-clip characteristics
Note B)
Color difference fade characteristics
Note B)
S/H LPF characteristics
Note A)
Note A, D)
Symbol
V
CGAM3
V
GAM4
V
CGC1
V
CGC2
V
IGAM1
V
IGAM2
V
IGAM3
V
YBLK
V
IBLK
V
RBLK
V
BBLK
V
VAP
V
EDGE1
V
EDGE2
V
HC
V
APY
V
APDL
V
APHAP
V
APVAP
V
LLSP
V
WFADE
V
DLAMP1
V
DLAMP2
V
DLAMP3
V
DLAMP4
V
CHC
V
CFADE
V
SHLPF
V
CLPF
V
VLPF1
V
VLPF2
V
EHPF
Condition
V
22
=10STEP 500mV
P–P
V
24
=10STEP 1V
P–P
10 step
V
23
=10STEP 500mV
P–P
V
24
=10STEP 1V
V
22
=Sin500kHz 600mV
P–P
V
23
=Sin500kHz 600mV
P–P
V
5
=10STEP 1V
P–P
3rd step
V
5
=10STEP 1V
P–P
5 step
V
5
=10STEP 1V
P–P
10 step
V
69
=C–GND
V
5
=C–GND
V
22
=C–GND
V
23
=C–GND
V
54
=10STEP 200mV
P–P
V
56
=10STEP 200mV
P–P
V
22
=Sin500kHz 600mV
P–P
V
23
=Sin500kHz 600mV
P–P
V
65
=10STEP 1500mV
P–P
V
16
=10STEP 300mV
P–P
V
16
=Sin3.5MHz 100mV
P–P
V
13
=Sin3.5MHz 600mV
P–P
V
11
=Sin500kHz 600mV
P–P
V
13
=Sin3.5MHz 600mV
P–P
V
16
=Vref
V
37
=Sin500kHz 500mV
P–P
(V
38
=0.5V)
V
42
=Sin500kHz 500mV
P–P
(V
41
=0.5V)
V
37
=Sin500kHz 500mV
P–P
(V
38
=3.0V)
V
42
=Sin500kHz 500mV
P–P
(V
41
=3.0V)
V
22
=V
23
=Sin500kHz 600mV
P–P
(V
5
=white)
V
22
=V
23
=Sin500kHz 600mV
P–P
V
65
=Sin3.5MHz 1500mV
P–P
V
22
=V
23
=Sin3.5MHz 600mV
P–P
V
48
=V
50
=Sin500kHz 200mV
P–P
V
48
=V
50
=Sin3.5MHz 200mV
P–P
V
54
=V
56
=Sin500kHz 500mV
P–P
min
510
–2
700
700
220
350
470
–20
–20
–20
–20
310
typ
720
0
1150
1150
300
480
630
0
0
0
0
450
max
930
2
1500
1500
390
620
800
20
20
20
20
610
–20
–20
Unit
mV
P–P
dB
mV
P–P
mV
P–P
mV
P–P
mV
P–P
mV
P–P
mV
mV
mV
mV
mV
P–P
dB
dB
mV
dB
ns
dB
dB
dB
mV
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
350
6.9
120
3.4
3.3
–12
515
0
0
8
8
–26
–26
–30
–26
0
–25
–4
Aperture mix circuit HAP gain
Note B)
Note B, E)
Aperture suppression characteristics
Note B)
Color difference LPF characteristics
Note B)
VAP LPF characteristics (1)
Note A)
VAP LPF characteristics (2)
Note A)
Edge HPF characteristics
Note A)
Note A) Sine waves with BLK and pedestal
Note B) Sine waves with BLK
Note C) For the AN2147FHP, 450mV
P-P
min., 665mV
P-P
typ., and 880mV
P-P
max. under the conditions
V
48
=10STEP 200mV
P-P
and V
50
=10STEP 200mV
P-P
.
Note D) 90ns typ. for the AN2146FHP and the AN2147FHP
Note E) 6.0dB typ. for the AN2147FHP
The value in the above characteristics is not a guaranteed value, but reference one on design.
PANASONIC [ PANASONIC SEMICONDUCTOR ]
