Power F-MOS FETs
Area of safe operation (ASO)
100
30
10
3
1
0.3
0.1
0.03
0.01
1
3
10
30
100
300
1000
DC
10ms
100ms
60
2SK3048
P
D
Ta
10
(1) T
C
=Ta
(2) Without heat sink
IAS
L-load
T
C
=25˚C
Allowable power dissipation P
D
(W)
Non repetitive pulse
T
C
=25˚C
Avalanche current IAS (A)
50
3
22.5mJ
Drain current I
D
(A)
t=10µs
100µs
1ms
40
1
30
(1)
20
0.3
10
(2)
0
0
20
40
60
80 100 120 140 160
0.1
0.1
0.3
1
3
10
Drain to source voltage V
DS
(V)
Ambient temperature Ta (˚C)
L-load (mH)
I
D
V
DS
6
6
I
D
V
GS
35
V
DS
=25V
T
C
=25˚C
5
V
DS
V
GS
T
C
=25˚C
V
GS
=10V
Drain to source voltage V
DS
(V)
Drain current I
D
(A)
6V 7V
5
30
Drain current I
D
(A)
25
4
5.5V
4
20
3
5V
2
40W
1
4.5V
4V
0
0
5
10
15
20
25
3
15
2
10
I
D
=3A
2A
1A
0
5
10
15
20
25
30
1
T
C
=125˚C
85˚C
0
0
2
4
6
8
10
12
0˚C
25˚C
5
0
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
Gate to source voltage V
GS
(V)
R
DS(on)
I
D
Drain to source ON-resistance R
DS(on)
(
Ω
)
6
7
| Y
fs
|
I
D
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) C
iss
,C
oss
,C
rss
(pF)
C
iss
, C
oss
, C
rss
V
DS
V
DS
=25V
1000
f=1MHz
T
C
=25˚C
C
iss
300
Forward transfer admittance |Y
fs
| (S)
V
GS
=10V
5
T
C
=125˚C
6
5
T
C
=0˚C
25˚C
85˚C
125˚C
4
85˚C
3
25˚C
4
100
C
oss
30
C
rss
10
3
2
2
0˚C
1
1
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
0
20
40
60
80
100
Drain current I
D
(A)
Drain current I
D
(A)
Drain to source voltage V
DS
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
