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2SK2123 参数 Datasheet PDF下载

2SK2123图片预览
型号: 2SK2123
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道功率的F- MOS FET [Silicon N-Channel Power F-MOS FET]
分类和应用:
文件页数/大小: 3 页 / 49 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SK2123的Datasheet PDF文件第1页浏览型号2SK2123的Datasheet PDF文件第2页  
Power F-MOS FETs
C
iss
, C
oss
, C
rss
V
DS
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) C
iss
,C
oss
,C
rss
(pF)
10000
f=1MHz
T
C
=25˚C
2SK2123
V
DS
, V
GS
Q
g
400
20
120
I
D
=5A
T
C
=25˚C
V
DS
t
d(on)
, t
r
, t
f
, t
d(off)
I
D
V
DD
=150V
V
GS
=10V
T
C
=25˚C
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
3000
1000
350
300
250
200
150
100
50
0
0
V
DS
=90V
225V
330V
Switching time t
d(on)
,t
r
,t
f
,t
d(off)
(ns)
100
15
C
iss
300
100
30
10
3
1
0
50
100
150
200
250
C
oss
C
rss
80
t
d(off)
10
60
t
r
40
t
f
t
d(on)
20
V
GS
5
10
20
30
40
50
0
60
0
0
1
2
3
4
5
Drain to source voltage V
DS
(V)
Gate charge amount Q
g
(nC)
Drain current I
D
(A)
R
th(t)
t
1000
Notes: R
th
was measured at Ta=25˚C
and under natural convection.
(1) P
T
=10V
×
0.2A(2W) and without heat sink
(2) P
T
=10V
×
1.0A(10W) and
with a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
100
10
(2)
1
0.1
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t (s)
3