Transistor
2SD875
Silicon NPN epitaxial planer type
For low-frequency power amplification
Complementary to 2SB767
Unit: mm
s
Features
q
q
q
4.5±0.1
1.6±0.2
1.5±0.1
1.0
–0.2
+0.1
Large collector power dissipation P
C
.
High collector to emitter voltage V
CEO
.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
(Ta=25˚C)
2.6±0.1
0.4max.
45°
0.4±0.08
0.5±0.08
1.5±0.1
4.0
–0.20
0.4±0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
3.0±0.15
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
80
80
5
1
0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
marking
Marking symbol :
X
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10µA, I
E
= 0
I
C
= 100µA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 5V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
I
C
= 300mA, I
B
=
30mA
*2
V
CB
= 10V, I
E
= –50mA
*2
, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
80
80
5
130
50
100
0.2
0.85
120
11
*2
min
typ
max
0.1
Unit
µA
V
V
V
330
0.4
1.2
MHz
pF
Pulse measurement
FE1
Rank classification
Rank
h
FE1
R
130 ~ 220
XR
S
185 ~ 330
XS
Marking Symbol
2.5±0.1
+0.25
V
V
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
