Transistor
P
C
— Ta
1.4
2SD874, 2SD874A
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
1.50
Ta=25˚C
1.25
I
B
=10mA
9mA
1.00
8mA
7mA
6mA
0.75
5mA
4mA
0.50
3mA
2mA
0.25
1mA
10
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.01 0.03
Ta=75˚C
25˚C
–25˚C
V
CE(sat)
— I
C
I
C
/I
B
=10
Collector power dissipation P
C
(W)
1.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120 140 160
Collector current I
C
(A)
0
0
2
4
6
8
10
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=10
600
V
CE
=10
200
V
CB
=10V
Ta=25˚C
f
T
— I
E
Base to emitter saturation voltage V
BE(sat)
(V)
500
Transition frequency f
T
(MHz)
1
3
10
30
10
3
25˚C
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=–25˚C
75˚C
Forward current transfer ratio h
FE
160
400
120
300
Ta=75˚C
200
25˚C
100
–25˚C
80
40
0.1
0.3
1
3
10
0
0.01 0.03
0.1
0.3
0
–1
–3
–10
–30
–100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
50
10
I
E
=0
f=1MHz
Ta=25˚C
Area of safe operation (ASO)
Single pulse
T
C
=25˚C
Collector output capacitance C
ob
(pF)
Collector current I
C
(A)
40
3
I
CP
1
I
C
t=1s
0.3
DC
30
20
0.1
0.03
0
1
3
10
30
100
0.01
0.1
0.3
1
3
10
30
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
2
2SD874A
100
10
2SD874
PANASONIC [ PANASONIC SEMICONDUCTOR ]
