Transistor
P
C
— Ta
1.4
2SD2413
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
120
Ta=25˚C
100
100
30
10
3
1
25˚C
0.3
–25˚C
0.1
0.03
0.01
0.1
Ta=75˚C
V
CE(sat)
— I
C
I
C
/I
B
=10
Collector power dissipation P
C
(W)
1.2
1.0
Collector current I
C
(mA)
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
80
I
B
=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
20
0.1mA
0
0.8
60
0.6
40
0.4
0.2
0
0
20
40
60
80 100 120 140 160
0
2
4
6
8
10
12
0.3
1
3
10
30
100
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
V
BE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=10
180
V
CE
=5V
60
f
T
— I
E
V
CB
=30V
Ta=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
150
Transition frequency f
T
(MHz)
30
100
30
10
3
25˚C
1
0.3
0.1
0.03
0.01
0.1
Ta=–25˚C
75˚C
Forward current transfer ratio h
FE
50
120
40
90
25˚C
60
Ta=75˚C
30
20
30
–25˚C
10
0.3
1
3
10
30
100
0
0.1
0.3
1
3
10
0
–1
–3
–10
–30
–100 –300 –1000
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
— V
CB
12
Collector output capacitance C
ob
(pF)
10
I
E
=0
f=1MHz
Ta=25˚C
8
6
4
2
0
10
30
100
300
1000
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
