Power Transistors
P
C
— Ta
40
6
(1) T
C
=Ta
(2) Without heat sink
(P
C
=2W)
T
C
=25˚C
2SD2374, 2SD2374A
I
C
— V
CE
8
7
5
V
CE
=4V
T
C
=25˚C
I
C
— V
BE
Collector power dissipation P
C
(W)
36
32
28
(1)
24
20
16
12
8
4
0
0
20
40
60
(2)
Collector current I
C
(A)
60mA
4
Collector current I
C
(A)
12
3
I
B
=100mA
90mA
80mA
70mA
50mA
40mA
30mA
20mA
6
5
4
3
2
1
2
10mA
1
0
80 100 120 140 160
0
2
4
6
8
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
10
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.01 0.03
I
C
/I
B
=8
T
C
=25˚C
10000
h
FE
— I
C
1000
V
CE
=4V
T
C
=25˚C
300
100
30
10
3
1
0.3
0.1
0.01 0.03
f
T
— I
C
V
CE
=10V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
300
100
30
10
3
1
0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
3000
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
100
30
10
3
Non repetitive pulse
T
C
=25˚C
R
th(t)
— t
(1) Without heat sink
(2) With a 100
×
80
×
2mm Al heat sink
Ta=25˚C
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10
2
10
I
CP
3
1
0.3
0.1
0.03
0.01
1
3
10
30
t=1ms
I
C
1s
10ms
(1)
(2)
10
1
2SD2374A
2SD2374
10
–1
100
300
1000
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
