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2SD2216J 参数 Datasheet PDF下载

2SD2216J图片预览
型号: 2SD2216J
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面型 [SILICON NPN EPITAXIAL PLANAR TYPE]
分类和应用: 晶体小信号双极晶体管光电二极管放大器局域网
文件页数/大小: 3 页 / 79 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SD2216J的Datasheet PDF文件第2页浏览型号2SD2216J的Datasheet PDF文件第3页  
Transistors
2SD2216J
Silicon NPN epitaxial planar type
1.60
+0.05
–0.03
1.00
±0.05
3
0.80
±0.05
For general amplification
Complementary to 2SB1462J
Features
High forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
Unit: mm
0.12
+0.03
–0.01
1.60
±0.05
0.85
+0.05
–0.03
1
0.27
±0.02
2
(0.50)(0.50)
0 to 0.02
(0.80)
Absolute Maximum Ratings
T
a
=
25°C
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
60
50
7
100
200
125
125
−55
to
+150
V
V
V
mA
mA
mW
°C
°C
0.10 max.
Parameter
Symbol
Rating
Unit
0.70
+0.05
–0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: Y
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE1
h
FE2
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
= 10 V, I
C
= 2 mA
V
CE
= 2 V, I
C
= 100 mA
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
180
90
0.1
150
3.5
0.3
V
MHz
pF
Min
60
50
7
0.1
100
390
Typ
Max
Unit
V
V
V
µA
µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
(0.375)
Publication date: January 2003
SJC00249CED
1