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2SD2210 参数 Datasheet PDF下载

2SD2210图片预览
型号: 2SD2210
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面型(适用于低电压输出放大) [Silicon NPN epitaxial planer type(For low-voltage output amplification)]
分类和应用: 晶体小信号双极晶体管开关光电二极管
文件页数/大小: 2 页 / 45 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SD2210的Datasheet PDF文件第2页  
Transistor
2SD2210
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
4.5±0.1
1.6±0.2
1.5±0.1
Unit: mm
2.6±0.1
0.4max.
s
Features
q
q
q
Low collector to emitter saturation voltage V
CE(sat)
.
Low ON resistance R
on
.
High foward current transfer ratio h
FE
.
(Ta=25˚C)
Ratings
25
20
12
1
0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
45°
1.0
–0.2
+0.1
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
3
2
1
4.0
–0.20
0.4±0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
marking
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol :
IK
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*3
*3
R
on
Conditions
V
CB
= 25V, I
E
= 0
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 0.5A, I
B
= 20mA
I
C
= 0.5A, I
B
= 50mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f= 1MHz
min
typ
max
1
Unit
µA
V
V
V
25
20
12
200
60
0.13
0.4
1.2
200
10
1.0
*2
800
MHz
pF
Pulse measurement
*1
h
FE1
Rank classification
Rank
h
FE1
R
200 ~ 350
IKR
S
300 ~ 500
IKS
T
400 ~ 800
IKT
Measurement circuit
1kΩ
I
B
=1mA
f=1kHz
V=0.3V
V
B
V
V
V
A
Marking Symbol
R
on
=
V
B
!1000(Ω)
V
A
–V
B
2.5±0.1
+0.25
V
V
1