Transistor
P
C
— Ta
1.2
120
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ta=25˚C
100
2SD2185
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
10
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.01 0.03
Ta=75˚C
25˚C
–25˚C
V
CE(sat)
— I
C
I
C
/I
B
=50
Collector power dissipation P
C
(W)
1.0
Collector current I
C
(mA)
I
B
=400µA
80
350µA
300µA
60
250µA
200µA
40
150µA
20
100µA
50µA
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=50
300
V
CE
=2V
240
f
T
— I
E
V
CB
=10V
Ta=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
250
Ta=75˚C
200
25˚C
150
–25˚C
100
Transition frequency f
T
(MHz)
1
3
10
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=–25˚C
100˚C
Forward current transfer ratio h
FE
200
160
25˚C
120
80
50
40
0.1
0.3
1
3
10
0
0.01 0.03
0.1
0.3
0
–1
–3
–10
–30
–100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
60
Collector output capacitance C
ob
(pF)
50
I
E
=0
f=1MHz
Ta=25˚C
40
30
20
10
0
1
3
10
30
100
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
