Power Transistors
P
C
— Ta
40
5
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
30
T
C
=25˚C
2SD1985, 2SD1985A
I
C
— V
CE
8
V
CE
=4V
7
25˚C
6
5
4
3
2
1
T
C
=100˚C
–25˚C
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
I
B
=100mA
90mA
80mA
70mA
60mA
50mA
40mA
30mA
20mA
1
10mA
3
(1)
20
2
10
(2)
(3)
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
4
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=8
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
–25˚C
T
C
=100˚C
25˚C
10000
h
FE
— I
C
10000
V
CE
=4V
3000
1000
300
100
30
10
3
1
0.01 0.03
f
T
— I
C
V
CE
=5V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
300
100
30
10
3
1
0.01 0.03
T
C
=100˚C
25˚C
–25˚C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
3000
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
–10
–3
I
CP
I
C
DC
10ms
10000
Non repetitive pulse
T
C
=25˚C
t=1ms
R
th(t)
— t
Note: R
th
was measured at Ta=25˚C and under natural convection.
(1) P
T
=10V
×
0.2A (2W) and without heat sink
(2) P
T
=10V
×
1.0A (10W) and with a 100
×
100
×
2mm Al heat sink
–1
– 0.3
– 0.1
– 0.03
– 0.01
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
1000
100
(1)
(2)
10
2SD1985
– 0.003
– 0.001
–1
2SD1985A
1
–3
–10
–30
–100 –300 –1000
0.1
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
