Transistor
P
C
— Ta
240
60
Ta=25˚C
I
B
=160µA
200
50
1000
2SD1819A
I
C
— V
CE
1200
V
CE
=10V
Ta=25˚C
I
B
— V
BE
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
160
40
Base current I
B
(
µA
)
140µA
120µA
100µA
30
80µA
20
60µA
40µA
10
20µA
800
120
600
80
400
40
200
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
0
0
0.2
0.4
0.6
0.8
1.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
I
C
— V
BE
200
V
CE
=10V
200
240
V
CE
=10V
Ta=25˚C
I
C
— I
B
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
V
CE(sat)
— I
C
I
C
/I
B
=10
Collector current I
C
(mA)
Collector current I
C
(mA)
160
160
120
25˚C
Ta=75˚C
80
–25˚C
120
80
25˚C
Ta=75˚C
–25˚C
40
40
0
0
0.4
0.8
1.2
1.6
2.0
0
0
200
400
600
800
1000
0.3
1
3
10
30
100
Base to emitter voltage V
BE
(V)
Base current I
B
(
µA
)
Collector current I
C
(mA)
h
FE
— I
C
600
V
CE
=10V
300
f
T
— I
E
V
CB
=10V
Ta=25˚C
Forward current transfer ratio h
FE
500
Transition frequency f
T
(MHz)
30
100
240
400
Ta=75˚C
25˚C
180
300
–25˚C
120
200
100
60
0
0.1
0.3
1
3
10
0
– 0.1 – 0.3
–1
–3
–10
–30
–100
Collector current I
C
(mA)
Emitter current I
E
(mA)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
