Transistor
P
C
— Ta
1.2
2.4
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ta=25˚C
2.0
2SD1511
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
25˚C
1
75˚C
0.3
0.1
0.03
0.01
0.01 0.03
Ta=–25˚C
V
CE(sat)
— I
C
I
C
/I
B
=1000
Collector power dissipation P
C
(W)
1.0
0.8
Collector current I
C
(A)
1.6
0.6
1.2
180µA
160µA
140µA
120µA
100µA
I
B
=200µA
0.4
0.8
80µA
60µA
0.2
0.4
40µA
0
0
40
80
120
160
200
0
0
2
4
6
8
10
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
h
FE
— I
C
10
5
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=10V
30
I
E
=0
f=1MHz
Ta=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=1000
30
10
3
Ta=–25˚C
1
0.3
0.1
0.03
0.01
0.01 0.03
75˚C
25˚C
Forward current transfer ratio h
FE
Ta=75˚C
25˚C
10
4
–25˚C
10
3
25
20
15
10
10
2
5
0.1
0.3
1
3
10
10
0.01 0.03
0
0.1
0.3
1
3
10
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
