Power Transistors
P
C
— Ta
80
10
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=2.0W)
T
C
=25˚C
7
2SD1499
I
C
— V
CE
8
V
CE
=5V
25˚C
I
C
— V
BE
Collector power dissipation P
C
(W)
70
60
50
40
30
20
10
0
0
20
40
(2)
(1)
Collector current I
C
(A)
Collector current I
C
(A)
8
I
B
=100mA
6
80mA
60mA
4
40mA
2
20mA
10mA
6
5
4
3
2
1
0
T
C
=100˚C
–25˚C
(3)
0
60
80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=10
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
T
C
=100˚C
25˚C
10000
h
FE
— I
C
1000
V
CE
=5V
300
100
30
10
3
1
0.3
0.1
0.01 0.03
f
T
— I
C
V
CE
=5V
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
300
100
30
10
3
1
0.01 0.03
T
C
=100˚C
25˚C
–25˚C
–25˚C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
3000
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
100
30
10
2
Non repetitive pulse
T
C
=25˚C
R
th(t)
— t
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
10 I
CP
3
1
DC
0.3
0.1
0.03
0.01
1
3
10
30
100
300
1000
I
C
10ms
t=1ms
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10
(2)
1
10
–1
10
–2
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
