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2SD1480 参数 Datasheet PDF下载

2SD1480图片预览
型号: 2SD1480
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面类型(功率放大) [Silicon NPN triple diffusion planar type(For power amplification)]
分类和应用: 晶体晶体管功率双极晶体管放大器局域网
文件页数/大小: 2 页 / 48 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SD1480的Datasheet PDF文件第2页  
Power Transistors
2SD1480
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1052
Unit: mm
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
φ3.1±0.1
1.4±0.1
1.3±0.2
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
4.2±0.2
s
Features
q
q
q
High forward current transfer ratio h
FE
which has satisfactory
linearity
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
60
60
6
4
2
25
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
16.7±0.3
14.0±0.5
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Solder Dip
s
Absolute Maximum Ratings
4.0
7.5±0.2
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
(T
C
=25˚C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 60V, V
BE
= 0
V
CE
= 30V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 0.1A
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 1A
I
C
= 2A, I
B
= 0.2A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= – 0.1A,
V
CC
= 50V
20
0.2
3.5
0.7
60
35
70
250
1.2
2
V
V
MHz
µs
µs
µs
min
typ
max
200
300
1
Unit
µA
µA
mA
V
FE2
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE2
1