Power Transistors
P
C
— Ta
50
10
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
T
C
=25˚C
2SD1271, 2SD1271A
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
10
V
CE(sat)
— I
C
(1) I
C
/I
B
=10
(2) I
C
/I
B
=20
T
C
=25˚C
Collector power dissipation P
C
(W)
Collector current I
C
(A)
40
(1)
8
I
B
=55mA
6
50mA
45mA
40mA
35mA
30mA
20mA
15mA
2
10mA
5mA
0
3
30
1
(2)
(1)
0.3
20
4
0.1
10
(2)
(3)
(4)
0.03
0
0
20
40
60
80 100 120 140 160
0
2
4
6
8
10
12
0.01
0.01
0.03
0.1
0.3
1
3
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
10
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
(1) I
C
/I
B
=10
(2) I
C
/I
B
=20
T
C
=25˚C
100
I
C
/I
B
=20
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
T
C
=–25˚C
100˚C
25˚C
I
C
/I
B
=20
30
10
3
1
T
C
=100˚C
0.3
0.1
–25˚C
0.03
0.01
0.01 0.03
25˚C
3
(1)
(2)
1
0.3
0.1
0.03
0.1
0.3
1
3
10
0.01
0.1
0.3
1
3
10
30
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
h
FE
— I
C
10000
V
CE
=2V
10000
3000
1000
300
100
30
10
3
1
0.01 0.03
f
T
— I
C
10000
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=10V
f=10MHz
T
C
=25˚C
I
E
=0
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
300
Transition frequency f
T
(MHz)
3000
3000
1000
300
100
30
10
3
1
0.1
T
C
=100˚C
25˚C
100
–25˚C
30
10
3
1
0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0.3
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
