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2SD1269 参数 Datasheet PDF下载

2SD1269图片预览
型号: 2SD1269
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面型(适用于功率开关) [Silicon NPN epitaxial planar type(For power switching)]
分类和应用: 晶体开关晶体管功率双极晶体管局域网
文件页数/大小: 3 页 / 57 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SD1269的Datasheet PDF文件第2页浏览型号2SD1269的Datasheet PDF文件第3页  
Power Transistors
2SD1269
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB944
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
Unit: mm
4.2±0.2
s
Features
q
q
q
q
Low collector to emitter saturation voltage V
CE(sat)
Satisfactory linearity of foward current transfer ratio h
FE
Large collector current I
C
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
130
80
7
8
4
35
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
14.0±0.5
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 1A
I
C
= 3A, I
B
= 0.15A
I
C
= 3A, I
B
= 0.15A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= – 0.1A,
V
CC
= 50V
30
0.5
2.5
0.15
80
45
60
260
0.5
1.5
V
V
MHz
µs
µs
µs
min
typ
max
10
50
Unit
µA
µA
V
Rank classification
R
60 to 120
Q
90 to 180
P
130 to 260
Rank
h
FE2
1