Transistor
P
C
— Ta
1.2
2.4
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ta=25˚C
2.0
I
B
=7mA
6mA
1.6
5mA
1.2
4mA
3mA
0.8
2mA
0.4
5
2SD1119
I
C
— V
CE
6
V
CE
=2V
25˚C
Ta=75˚C
4
–25˚C
I
C
— V
BE
Collector power dissipation P
C
(W)
1.0
Collector current I
C
(A)
0.8
0.6
Collector current I
C
(A)
3
0.4
2
0.2
1mA
1
0
0
20
40
60
80 100 120 140 160
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
10
3
1
0.3
Ta=75˚C
0.1
0.03
0.01
0.003
0.001
0.01 0.03
25˚C
–25˚C
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=30
100
30
10
3
25˚C
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=–25˚C
75˚C
I
C
/I
B
=30
600
h
FE
— I
C
V
CE
=2V
Forward current transfer ratio h
FE
500
400
Ta=75˚C
300
25˚C
–25˚C
200
100
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0
0.01 0.03
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
f
T
— I
E
400
350
300
250
200
150
100
50
0
– 0.01 – 0.03 – 0.1 – 0.3
100
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CB
=6V
Ta=25˚C
I
E
=0
f=1MHz
Ta=25˚C
80
Transition frequency f
T
(MHz)
60
40
20
0
–1
–3
–10
1
3
10
30
100
Emitter current I
E
(A)
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
