Power Transistors
2SC5904
Silicon NPN triple diffusion mesa type
For Horizontal deflection output for TV, CRT monitor
15.5
±0.5
(10.0)
Unit: mm
φ
3.2
±0.1
5˚
(4.5)
■
Features
•
High breakdown voltage (V
CBO
≥
1 700 V)
•
High-speed switching (t
f
<
200 nsec)
•
Wide safe operation area
26.5
±0.5
3.0
±0.3
5˚
(23.4)
(2.0)
5˚
(4.0)
2.0
±0.2
1.1
±0.1
0.7
±0.1
5.45
±0.3
10.9
±0.5
5.5
±0.3
5˚
5˚
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current
*
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
B
I
C
I
CP
P
C
Rating
1 700
1 700
600
7
8
17
27
65
3.5
150
−55
to
+150
°C
°C
Unit
V
V
V
V
A
A
A
W
3.3
±0.3
18.6
±0.5
(2.0)
Solder Dip
5˚
1
2
3
(2.0)
1: Base
2: Collector
3: Emitter
TOP-3E-A1 Package
Marking Symbol: C5904
Internal Connection
C
B
Note) *: Non-repetitive peak collector current
E
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-base cutoff current (Emitter open)
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
=
1 000 V, I
E
=
0
V
CB
=
1 700 V, I
E
=
0
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Storage time
Fall time
V
EB
=
7 V, I
C
=
0
V
CE
=
5 V, I
C
=
8.5 A
I
C
=
8.5 A, I
B
=
2.13 A
I
C
=
8.5 A, I
B
=
2.13 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
0.5 MHz
I
C
=
8.5 A, Resistance loaded
I
B1
=
2.13 A, I
B2
= −4.25
A
3
3.0
0.2
5
Min
Typ
Max
50
1
50
12
3
1.5
Unit
µA
mA
µA
V
V
MHz
µs
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
22.0
±0.5
(1.2)
Publication date: February 2004
SJD00305AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
