Transistors
2SC5609
Silicon PNP epitaxial planer type
Unit: mm
For general amplification
Complementary to 2SA2021
I
Features
•
High foward current transfer ratio h
FE
•
SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
0.33
+0.05
–0.02
3
0.10
+0.05
–0.02
(0.40) (0.40)
0.80
±0.05
1.20
±0.05
5˚
0.15 min.
0.23
+0.05
–0.02
1
2
I
Absolute Maximum Ratings
T
a
=
25°C
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
60
50
7
200
100
100
125
−55
to
+125
V
V
V
mA
mA
mW
°C
°C
0 to 0.01
Parameter
Symbol
Rating
Unit
1: Base
2: Emitter
3: Collector
SSS Mini Type Package (3-pin)
Marking Symbol: 3F
I
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector cutoff current
Symbol
I
CBO
I
CEO
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
Collector to emitter saturation voltage
Collector output capacitance
Transition frequency
V
CE(sat)
C
ob
f
T
Conditions
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CE
=
10 V, I
C
=
2 mA
V
CE
=
2 V, I
C
=
100 mA
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CB
= 10 V, I
E
=
−2
mA, f = 200 MHz
60
50
7
180
90
0.1
3.5
80
0.3
V
pF
MHz
390
Min
Typ
Max
0.1
100
Unit
µA
µA
V
V
V
0.52
±0.03
5˚
0.15 min.
0.80
±0.05
1.20
±0.05
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
