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2SC5244A 参数 Datasheet PDF下载

2SC5244A图片预览
型号: 2SC5244A
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散台面型(水平偏转输出) [Silicon NPN triple diffusion mesa type(For horizontal deflection output)]
分类和应用:
文件页数/大小: 2 页 / 48 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SC5244A的Datasheet PDF文件第2页  
Power Transistors
2SC5244, 2SC5244A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
20.0±0.5
Unit: mm
φ
3.3±0.2
5.0±0.3
3.0
6.0
s
Features
q
q
q
1.5
1.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SC5244
2SC5244A
2SC5244
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
P
C
T
j
T
stg
20.0±0.5
2.5
2.0±0.3
3.0±0.3
1.0±0.2
(T
C
=25˚C)
Ratings
1500
1600
1500
1600
6
20
30
200
3.5
150
–55 to +150
Unit
V
2.7±0.3
0.6±0.2
5.45±0.3
10.9±0.5
emitter voltage 2SC5244A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
1
2
3
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
TOP–3L Package
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
2SC5244
2SC5244A
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 1500V, I
E
= 0
V
CB
= 1600V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10A
I
C
= 10A, I
B
= 2.8A
I
C
= 10A, I
B
= 2.8A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 12A, I
B1
= 2.4A, I
B2
= –4.8A,
Resistance loaded
3
1.5
0.12
2.5
0.2
5
min
typ
max
1
1
50
12
3
1.5
V
V
MHz
µs
µs
Unit
mA
µA
2.0
1.5
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
26.0±0.5
10.0
2.0
4.0
3.0
1