Power Transistors
P
C
— Ta
240
16
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3.0W)
T
C
=25˚C
14
2SC5243
I
C
— V
CE
1000
V
CE
=5V
h
FE
— I
C
Collector power dissipation P
C
(W)
220
200
180
160
140
120
100
80
60
40
(1)
12
10
8
Forward current transfer ratio h
FE
Collector current I
C
(A)
I
B
=1000mA
800mA
600mA
400mA
100
T
C
=100˚C
25˚C
10
–25˚C
200mA
6
4
2
0
1
(3)
20
0
0
20
40
60
80 100 120 140 160
(2)
0
2
4
6
8
10
12
0.1
0.01
0.1
1
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
T
C
=–25˚C
25˚C
100˚C
100
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=3.5
I
C
/I
B
=3.5
Area of safe operation, horizontal operation ASO
50
f=64kHz, T
C
=25˚C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
10
Collector current I
C
(A)
40
30
1
T
C
=–25˚C
25˚C
100˚C
20
0.1
10
<1mA
0.01
0.1
0
1
10
100
0
400
800
1200
1600
2000
0.3
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
R
th(t)
— t
1000
Note: R
th
was measured at Ta=25˚C and under natural convection
(1) P
T
=10V
×
0.3A (3W) and without heat sink
(2) P
T
=10V
×
1.0A (10W) and with a 100
×
100
×
2mm Al heat sink
100
(1)
Thermal resistance R
th
(t) (˚C/W)
10
(2)
1
0.1
0.01
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t (s)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
