Transistor
C
ob
— V
CB
1.2
2SC4627
PG — I
E
I
E
=0
f=1MHz
Ta=25˚C
40
35
f=100MHz
R
g
=50Ω
Ta=25˚C
V
CE
=10V
6V
12
NF — I
E
f=100MHz
R
g
=50kΩ
Ta=25˚C
Collector output capacitance C
ob
(pF)
1.0
10
0.8
Noise figure NF (dB)
Power gain PG (dB)
30
25
20
15
10
5
8
0.6
6
0.4
4
V
CE
=6V, 10V
0.2
2
0
0
5
10
15
20
25
30
0
– 0.1 – 0.3
–1
–3
–10
–30
–100
0
– 0.1 – 0.3
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
Emitter current I
E
(mA)
Emitter current I
E
(mA)
b
ie
— g
ie
20
0
b
re
— g
re
Reverse transfer susceptance b
re
(mS)
Forward transfer susceptance b
fe
(mS)
150
b
fe
— g
fe
10.7
25
0
– 0.4mA
–1mA
100
150
–2mA
10.7
58
18
y
ie
=g
ie
+jb
ie
V
CE
=10V
–4mA
100
y
re
=g
re
+jb
re
V
CE
=10V
–1
–4mA
–2
Input susceptance b
ie
(mS)
16
14
12
58
–2mA
100
–7mA
–20
–1mA
58
I
E
=–7mA
–40
150
–4mA
100
58
10
8
6
4
2
–1mA
I
E
=– 0.5mA
–3
–60
f=150MHz
I
E
=–7mA
100
58
–4
100
–80
25
25
–5
f=150MHz
–6
– 0.5
– 0.4
– 0.3
– 0.2
– 0.1
0
–100
y
fe
=g
fe
+jb
fe
V
CE
=10V
0
20
40
60
80
100
f=10.7MHz
0
0
3
6
9
12
15
–120
Input conductance g
ie
(mS)
Reverse transfer conductance g
re
(mS)
Forward transfer conductance
g
fe
(mS)
b
oe
— g
oe
I
E
=– 0.5mA
–1mA
1.2
150
–2mA
–4mA
100
Output susceptance b
oe
(mS)
1.0
0.8
–7mA
0.6
58
0.4
25
0.2
f=10.7MHz
0
0
0.1
0.2
0.3
0.4
0.5
y
oe
=g
oe
+jb
oe
V
CE
=10V
Output conductance g
oe
(mS)
3
PANASONIC [ PANASONIC SEMICONDUCTOR ]
