Power Transistors
P
C
— Ta
200
2SC4111
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
12
T
C
=25˚C
10
100
I
C
/I
B
=2.8
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
V
CE(sat)
— I
C
Collector power dissipation P
C
(W)
150
Collector current I
C
(A)
(1)
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
I
B
=2A
8
1A
6
0.7A
0.5A
4
0.2A
2
0.1A
0.05A
0
T
C
=100˚C
25˚C
–25˚C
100
50
(2)
0
0
20
40
(3)
60
80 100 120 140 160
0
2
4
6
8
10
12
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=2.8
1000
V
CE
=5V
100
f
T
— I
C
V
CE
=10V
f=0.5MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
30
300
Transition frequency f
T
(MHz)
1
3
10
30
10
100
10
3
30
T
C
=100˚C
25˚C
3
1
T
C
=–25˚C
100˚C
10
–25˚C
1
0.3
25˚C
3
0.3
0.1
0.01 0.03
0.1
0.3
1
3
10
1
0.01 0.03
0.1
0.3
0.1
0.01 0.03
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
10000
Area of safe operation (ASO)
100
I
E
=0
f=1MHz
T
C
=25˚C
30
I
CP
I
C
10ms
DC
1
0.3
0.1
0.03
Non repetitive pulse
T
C
=25˚C
Area of safe operation, horizontal operation ASO
40
35
f=15.75kHz, T
C
=25˚C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
I
CP
Collector output capacitance C
ob
(pF)
3000
Collector current I
C
(A)
Collector current I
C
(A)
10
3
t=1ms
30
25
20
15
10
5
1000
300
100
30
<1mA
10
1
3
10
30
100
0.01
1
3
10
30
100
300
1000
0
0
200 400 600 800 1000 1200 1400 1600
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
Collector to emitter voltage V
CE
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
