Power Transistors
2SC3979, 2SC3979A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
0.7±0.1
q
q
q
q
q
High-speed switching
High collector to base voltage V
CBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio h
FE
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
900
1000
900
1000
800
7
5
3
1
40
2
150
–55 to +150
Unit
V
4.2±0.2
s
Features
16.7±0.3
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
7.5±0.2
φ3.1±0.1
4.0
1.7±0.2
Solder Dip
1.3±0.2
1.05±0.1
0.8±0.1
0.5
–0.1
2.54±0.3
+0.2
Parameter
Collector to
base voltage
Collector to
2SC3979
2SC3979A
2SC3979
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
14.0±0.5
s
Absolute Maximum Ratings
5.08±0.5
emitter voltage 2SC3979A
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
V
V
A
A
A
W
˚C
˚C
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(b)
P
C
T
j
T
stg
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
2SC3979
2SC3979A
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 900V, I
E
= 0
V
CB
= 1000V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 0.8A
I
C
= 0.8A, I
B
= 0.16A
I
C
= 0.8A, I
B
= 0.16A
V
CE
= 5V, I
C
= 0.15A, f = 1MHz
I
C
= 0.8A, I
B1
= 0.16A, I
B2
= – 0.32A,
V
CC
= 250V
10
0.7
2.5
0.3
800
8
6
1.5
1.5
V
V
MHz
µs
µs
µs
min
typ
max
50
50
50
Unit
µA
µA
V
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
