欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SC3936 参数 Datasheet PDF下载

2SC3936图片预览
型号: 2SC3936
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面型(适用于高频放大) [Silicon NPN epitaxial planer type(For high-frequency amplification)]
分类和应用:
文件页数/大小: 3 页 / 58 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SC3936的Datasheet PDF文件第2页浏览型号2SC3936的Datasheet PDF文件第3页  
Transistor
2SC3936
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
2.1±0.1
s
Features
q
q
0.425
1.25±0.1
0.425
Optimum for RF amplification, oscillation, mixing, and IF of FM/
AM radios.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
0.7±0.1
0 to 0.1
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol :
K
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Transition frequency
Common emitter reverse transfer capacitance
(Ta=25˚C)
Symbol
V
CBO
V
CEO
V
EBO
h
FE*
f
T
C
re
Conditions
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= –1mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
min
30
20
5
70
150
230
1.3
250
MHz
pF
typ
max
Unit
V
V
V
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
B
70 ~ 160
KB
C
110 ~ 250
KC
0.15
–0.05
+0.1
s
Absolute Maximum Ratings
(Ta=25˚C)
0.2
0.3
–0
+0.1
1