Transistor
P
C
— Ta
240
30
Ta=25˚C
200
25
I
B
=250µA
100
2SC3904
I
C
— V
CE
120
V
CE
=8V
I
C
— V
BE
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
Collector current I
C
(mA)
160
20
200µA
80
Ta=75˚C
60
25˚C
–25˚C
120
15
150µA
80
10
100µA
40
40
5
50µA
20
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
10
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.1
Ta=75˚C
25˚C
–25˚C
I
C
/I
B
=10
240
h
FE
— I
C
12
V
CE
=8V
f
T
— I
C
V
CB
=8V
f=1.5GHz
Ta=25˚C
Forward current transfer ratio h
FE
200
Transition frequency f
T
(GHz)
10
30
100
10
160
Ta=75˚C
8
120
25˚C
80
–25˚C
40
6
4
2
0.3
1
3
10
30
100
0
0.1
0
0.3
1
3
1
3
10
30
100
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
I
E
=0
f=1MHz
Ta=25˚C
GUM — I
C
Maximum unilateral power gain GUM (dB)
12
V
CE
=8V
f=1.5GHz
Ta=25˚C
6
NF — I
C
V
CE
=8V
f=1.5GHz
Ta=25˚C
1.2
1.0
10
5
0.8
8
Noise figure NF (dB)
0.3
1
3
10
30
100
4
0.6
6
3
0.4
4
2
0.2
2
1
0
1
3
10
30
100
0
0.1
0
0.1
0.3
1
3
10
30
100
Collector to base voltage V
CB
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
