Transistors
2SC3757
Silicon NPN epitaxial planer type
Unit: mm
For high speed switching
I
Features
•
High-speed switching
•
Low collector to emitter saturation voltage V
CE(sat)
•
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
•
Allowing pair use with 2SA1738
1
0.40
+0.10
–0.05
3
0.16
+0.10
–0.06
1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
10°
1.1
+0.2
–0.1
(0.65)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
40
40
5
300
100
200
150
−55
to
+150
Unit
V
V
V
mA
mA
mW
°C
°C
1: Base
2: Emitter
3: Collector
0 to 0.1
I
Absolute Maximum Ratings
T
a
=
25°C
1.1
+0.3
–0.1
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package
Marking Symbol: 2Y
I
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
*
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
Note) *: Rank classification
Rank
h
FE
Marking symbol
Q
60 to 120
2YQ
R
90 to 200
2YR
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
Refere to the measurement circuit
Conditions
V
CB
=
15 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
V
CE
=
1 V, I
C
=
10 mA
I
C
=
10 mA, I
B
=
1 mA
I
C
=
10 mA, I
B
=
1 mA
V
CB
=
10 V, I
E
= −10
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
450
2
17
17
10
6
60
0.17
Min
Typ
Max
0.1
0.1
200
0.25
1.0
V
V
MHz
pF
ns
ns
ns
Unit
µA
µA
0.4
±0.2
5°
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
