Transistor
P
C
— Ta
100
6
Ta=25˚C
I
B
=50µA
5
45µA
40µA
4
35µA
30µA
3
25µA
20µA
2
15µA
10µA
1
5µA
50
2SC3707
I
C
— V
CE
60
V
CE
=1V
I
C
— V
BE
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
75
Collector current I
C
(mA)
40
25˚C
Ta=75˚C
30
–25˚C
50
20
25
10
0
0
20
40
60
80 100 120 140 160
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
Ta=75˚C
0.3
0.1
0.03
0.01
0.1
25˚C
–25˚C
I
C
/I
B
=10
240
h
FE
— I
C
12
V
CE
=1V
f
T
— I
C
V
CE
=1V
f=800MHz
Ta=25˚C
Forward current transfer ratio h
FE
200
Transition frequency f
T
(GHz)
10
30
100
10
160
Ta=75˚C
120
25˚C
80
–25˚C
40
8
6
4
2
0.3
1
3
10
30
100
0
0.1
0.3
1
3
0
0.1
0.3
1
3
10
30
100
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
I
E
=0
f=1MHz
Ta=25˚C
GUM — I
C
Maximum unilateral power gain GUM (dB)
24
V
CE
=1V
f=800MHz
Ta=25˚C
6
NF — I
C
V
CE
=1V
(R
g
=50Ω)
f=800MHz
Ta=25˚C
1.2
1.0
20
5
0.8
16
Noise figure NF (dB)
0.3
1
3
10
30
100
4
0.6
12
3
0.4
8
1
0.2
4
1
0
0.1
0.3
1
3
10
30
100
0
0.1
0
0.1
0.3
1
3
10
30
100
Collector to base voltage V
CB
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
