Power Transistors
P
C
— Ta
100
10
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3W)
T
C
=25˚C
2SC3507
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=5
30
10
3
T
C
=100˚C
1
25˚C
0.3
–25˚C
0.1
0.03
0.01
0.01 0.03
V
CE(sat)
— I
C
Collector power dissipation P
C
(W)
60
Collector current I
C
(A)
80
(1)
8
6
I
B
=800mA
500mA
400mA
300mA
200mA
40
4
20 (2)
(3)
0
0
25
50
75
100
125
150
2
100mA
20mA
0
0
2
4
6
8
10
12
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
1000
I
C
/I
B
=5
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
T
C
=–25˚C
100˚C
25˚C
h
FE
— I
C
1000
V
CE
=5V
300
100
30
10
3
1
0.3
0.1
0.01 0.03
f
T
— I
C
V
CE
=5V
f=1MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
100
30
10
3
1
0.3
0.1
0.01 0.03
T
C
=100˚C
25˚C
–25˚C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
300
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
t
on
, t
stg
, t
f
— I
C
10
Area of safe operation (ASO)
100
30
Non repetitive pulse
T
C
=25˚C
I
CP
I
C
3
1
0.3
0.1
0.03
0.01
8
1
3
10
30
100
300
1000
10ms
DC
t=1ms
Switching time t
on
,t
stg
,t
f
(
µs
)
3
Collector current I
C
(A)
t
stg
1
10
0.3
t
on
t
f
0.1
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=5
(2I
B1
=–I
B2
)
V
CC
=250V
T
C
=25˚C
0
1
2
3
4
5
6
7
0.03
0.01
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
