Transistor
P
C
— Ta
250
160
140
2SC2405, 2SC2406
I
C
— V
CE
Ta=25˚C
160
V
CE
=5V
Ta=25˚C
140
I
B
=350µA
300µA
100
250µA
80
60
40
02
0
200µA
150µA
100µA
I
C
— I
B
Collector power dissipation P
C
(mW)
225
Collector current I
C
(mA)
120
Collector current I
C
(mA)
200
175
150
125
100
75
50
25
0
0
20
40
60
80 100 120 140 160
120
100
80
60
40
20
0
50µA
0
2
4
6
8
10
12
0
0.1
0.2
0.3
0.4
0.5
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base current I
B
(mA)
I
C
— V
BE
Collector to emitter saturation voltage V
CE(sat)
(V)
120
25˚C
100
V
CE
=5V
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
V
CE(sat)
— I
C
I
C
/I
B
=10
1000
900
800
700
600
500
400
300
200
100
0
0.1
h
FE
— I
C
V
CE
=5V
Collector current I
C
(mA)
Ta=75˚C
80
–25˚C
60
Forward current transfer ratio h
FE
Ta=75˚C
25˚C
–25˚C
40
25˚C
Ta=75˚C
20
–25˚C
0
0
0.4
0.8
1.2
1.6
2.0
0.3
1
3
10
30
100
0.3
1
3
10
30
100
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
f
T
— I
E
500
450
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CB
=5V
Ta=25˚C
10
9
8
7
6
5
4
3
2
1
0
0.1
I
E
=0
f=1MHz
Ta=25˚C
160
140
NV — V
CE
I
C
=1mA
G
V
=80dB
Function=FLAT
R
g
=100kΩ
100
80
60
40
20
0
22kΩ
Transition frequency f
T
(MHz)
Noise voltage NV (mV)
400
350
300
250
200
150
100
50
0
– 0.1 – 0.3
120
4.7kΩ
–1
–3
–10
–30
–100
0.3
1
3
10
30
100
1
3
10
30
100
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
