Transistor
P
C
— Ta
200
12
Ta=25˚C
175
10
I
B
=100µA
10
2SC2404
I
C
— V
CE
12
V
CE
=6V
Ta=25˚C
I
C
— I
B
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
150
125
100
75
50
25
0
0
20
40
60
80 100 120 140 160
8
80µA
Collector current I
C
(mA)
18
8
60µA
6
40µA
4
20µA
6
4
2
2
0
0
6
12
0
0
60
120
180
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base current I
B
(
µA
)
I
C
— V
BE
Collector to emitter saturation voltage V
CE(sat)
(V)
30
V
CE
=6V
25
25˚C
Ta=75˚C
20
–25˚C
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
V
CE(sat)
— I
C
I
C
/I
B
=10
360
h
FE
— I
C
V
CE
=6V
Forward current transfer ratio h
FE
300
Collector current I
C
(mA)
240
Ta=75˚C
25˚C
120
–25˚C
15
180
10
25˚C
Ta=75˚C
5
–25˚C
60
0
0
0.4
0.8
1.2
1.6
2.0
0.3
1
3
10
30
100
0
0.1
0.3
1
3
10
30
100
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
f
T
— I
E
Common emitter reverse transfer capacitance C
re
(pF)
1200
V
CB
=6V
Ta=25˚C
2.4
C
re
— V
CE
Collector output capacitance C
ob
(pF)
I
C
=1mA
f=10.7MHz
Ta=25˚C
1.2
C
ob
— V
CB
I
E
=0
f=1MHz
Ta=25˚C
Transition frequency f
T
(MHz)
1000
2.0
1.0
800
1.6
0.8
600
1.2
0.6
400
0.8
0.4
200
0.4
0.2
0
– 0.1 – 0.3
–1
–3
–10
–30
–100
0
0.1
0
0.3
1
3
10
30
100
0
5
10
15
20
25
30
Emitter current I
E
(mA)
Collector to emitter voltage V
CE
(V)
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
