Power Transistors
2SC1846
Silicon NPN epitaxial planar type
For medium output power amplification
Complementary to 2SA0885
Unit: mm
3.2 0.2
+0.5
–0.1
8.0
φ 3.16 0.1
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Output of 3 W can be obtained by a complementary pair with
2SA0885
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings Ta = 25°C
0.75 0.1
4.6 0.2
0.5 0.1
2.3 0.2
Parameter
Symbol
Rating
Unit
V
0.5 0.1
1.76 0.1
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
45
1: Emitter
2: Collector
3: Base
35
V
1
2
3
5
V
TO-126B-A1 Package
Collector current
IC
ICP
PC
1
1.5
A
Peak collector current
Collector power dissipation
A
1.2
W
5.0 *
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
Note) : With a 100 × 100 × 2 mm Al heat sink
*
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
Min
45
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
IC = 1 mA, IE = 0
IC = 2 mA, IB = 0
35
V
VCB = 20 V, IE = 0
VCE = 20 V, IB = 0
VEB = 5 V, IC = 0
0.1
100
10
µA
µA
µA
ICEO
IEBO
*
hFE1
VCE = 10 V, IC = 500 mA
VCE = 5 V, IC = 1 A
85
50
340
hFE2
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 500 mA, IB = 50 mA
0.5
20
V
MHz
pF
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
200
Collector output capacitance
Cob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Publication date: February 2003
SJD00094BED
1
PANASONIC [ PANASONIC ]
