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2SC1846 参数 Datasheet PDF下载

2SC1846图片预览
型号: 2SC1846
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面型 [Silicon NPN epitaxial planar type]
分类和应用:
文件页数/大小: 4 页 / 93 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
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2SC1846
P
C
T
a
6
I
C
V
CE
1.50
T
C
=25˚C
I
C
I
B
1.2
V
CE
=10V
Ta=25˚C
Collector power dissipation P
C
(W)
5
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
1.25
I
B
=10mA
1.0
9mA
8mA
7mA
6mA
Collector current I
C
(A)
4
1.00
Collector current I
C
(A)
0.8
3
(1)
0.75
5mA
4mA
0.6
2
0.50
3mA
2mA
0.4
1
0.25
(2)
1mA
0.2
0
0
0
40
80
120
160
200
0
2
4
6
8
10
0
0
2
4
6
8
10
12
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
1
T
C
=100˚C
25˚C
V
BE(sat)
I
C
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
I
C
/I
B
=10
h
FE
I
C
V
CE
=10V
10
1000
Forward current transfer ratio h
FE
T
C
=100˚C
25˚C
0.1
–25˚C
1
T
C
=–25˚C
100˚C
25˚C
100
–25˚C
0.01
0.1
10
0.001
0.01
0.1
1
0.01
0.01
0.1
1
1
0.01
0.1
1
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
f
T
I
E
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
200
V
CB
=10V
f=200MHz
T
C
=25˚C
C
ob
V
CB
50
V
CER
R
BE
100
Collector-emitter voltage
(V)
(Resistor between B and E) V
CER
I
E
=0
f=1MHz
T
C
=25˚C
I
C
=10mA
T
C
=25˚C
Transition frequency f
T
(MHz)
160
40
80
120
30
60
80
20
40
40
10
20
0
−1
−10
−100
0
1
10
100
0
0.1
1
10
100
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
Base-emitter resistance R
BE
(kΩ)
2
SJD00094BED