Power Transistors
2SB953, 2SB953A
Silicon PNP epitaxial planar type
For low-voltage switching
Complementary to 2SD1444 and 2SD1444A
0.7±0.1
Unit: mm
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
φ3.1±0.1
1.4±0.1
1.3±0.2
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
4.2±0.2
s
Features
q
q
q
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB953
2SB953A
2SB953
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(T
C
=25˚C)
–40
–50
–20
–40
–5
–12
–7
30
2
150
–55 to +150
4.0
14.0±0.5
Solder Dip
Ratings
Unit
V
emitter voltage 2SB953A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
V
A
A
W
˚C
˚C
16.7±0.3
Low collector to emitter saturation voltage V
CE(sat)
High-speed switching
Full-pack package which can be installed to the heat sink with
one screw
7.5±0.2
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SB953
2SB953A
2SB953
2SB953A
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
I
C
= –2A, I
B1
= –66mA, I
B2
= 66mA
Conditions
V
CB
= –40V, I
E
= 0
V
CB
= –50V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –2V, I
C
= – 0.1A
V
CE
= –2V, I
C
= –2A
I
C
= –5A, I
B
= – 0.16A
I
C
= –5A, I
B
= – 0.16A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
150
140
0.1
0.5
0.1
–20
–40
45
90
260
– 0.6
–1.5
V
V
MHz
pF
µs
µs
µs
min
typ
max
–50
–50
–50
Unit
µA
µA
V
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*
h
FE2
Rank classification
Q
90 to 180
P
130 to 260
Note: Ordering can be made by the common rank (PQ rank h
FE2
= 90 to 260) in the
rank classification.
Rank
h
FE2
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
