Power Transistors
P
C
— Ta
50
–8
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
–7
I
B
=–120mA
T
C
=25˚C
2SB945
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
I
C
/I
B
=20
–30
–10
–3
–1
V
CE(sat)
— I
C
Collector power dissipation P
C
(W)
Collector current I
C
(A)
40
–100mA
–6
–5
–4
–3
–20mA
–2
–10mA
–1
–3mA
0
–80mA
–60mA
–40mA
–30mA
30
(1)
20
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
25˚C
T
C
=100˚C
–25˚C
10
(3)
(4)
0
0
20
40
60
(2)
80 100 120 140 160
0
–2
–4
–6
–8
–10
–1
–3
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
–100
10000
I
C
/I
B
=20
h
FE
— I
C
10000
V
CE
=–2V
3000
1000
300
100
30
10
3
f
T
— I
C
V
CE
=–10V
f=10MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
–10
–3
25˚C
–1
T
C
=–25˚C
100˚C
1000
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3
25˚C
T
C
=100˚C
–25˚C
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
Transition frequency f
T
(MHz)
–3
–10
–30
3000
–1
–3
–10
–1
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
10000
100
I
E
=0
f=1MHz
T
C
=25˚C
30
t
on
, t
stg
, t
f
— I
C
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10
(–I
B1
=I
B2
)
V
CC
=–50V
T
C
=25˚C
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
T
C
=25˚C
I
CP
I
C
–3
–1
DC
10ms
1ms
t=0.5ms
Collector output capacitance C
ob
(pF)
3000
1000
300
100
30
10
3
1
– 0.1 – 0.3
Switching time t
on
,t
stg
,t
f
(
µs
)
10
3
1
0.3
0.1
0.03
0.01
Collector current I
C
(A)
–10
t
stg
t
on
t
f
– 0.3
– 0.1
– 0.03
– 0.01
–1
–1
–3
–10
–30
–100
0
– 0.8
–1.6
–2.4
–3.2
–3
–10
–30
–100 –300 –1000
Collector to base voltage V
CB
(V)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
